transistors 1 publication date: november 2002 sjc00108bed 2sc1573, 2SC1573A, 2sc1573b silicon npn triple diffusion planar type for high breakdown voltage general amplification for small tv video output complementary to 2sc1573 and 2sa0879 features ? high collector-emitter voltage (base open) v ceo ? high transition frequency f t absolute maximum ratings t a = 25 c unit: mm parameter symbol rating unit collector-base voltage 2sc1573 v cbo 250 v (emitter open) 2SC1573A 300 2sc1573b 400 collector-emitter voltage 2sc1573 v ceo 200 v (base open) 2SC1573A 300 2sc1573b 400 emitter-base voltage 2sc1573 v ebo 5v (collector open) 2SC1573A 7 2sc1573b collector current i c 70 ma peak collector current i cp 100 ma collector power dissipation p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 5.9 0.2 0.7 0.1 4.9 0.2 8.6 0.2 0.7 +0.3 ?0.2 13.5 0.5 2.54 0.15 (3.2) (1.27) (1.27) 0.45 +0.2 ?0.1 0.45 +0.2 ?0.1 13 2 1: emitter 2: collector 3: base eiaj: sc-51 to-92l-a1 package
2sc1573, 2SC1573A, 2sc1573b 2 sjc00108bed parameter symbol conditions min typ max unit collector-emitter voltage 2sc1573 v ceo i c = 100 a, i b = 0 200 v (base open) 2SC1573A 300 2sc1573b 400 emitter-base voltage 2sc1573 v ebo i e = 1 a, i c = 05v (collector open) 2SC1573A 7 2sc1573b 7 collector-base cut-off current 2sc1573 i cbo v cb = 12 v, i e = 02 a (emitter open) 2SC1573A 2sc1573b v cb = 200 v, i e = 010 forward current transfer ratio 2sc1573 h fe * v ce = 10 v, i c = 5 ma 60 220 ? 2SC1573A 30 220 2sc1573b collector-emitter saturation voltage v ce(sat) i c = 50 ma, i b = 5 ma 1.2 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 50 80 mhz collector output capacitance 2sc1573 c ob v cb = 10 v, i e = 0, f = 1 mhz 5 10 pf (common base, input 2SC1573A 48 open circuited) 2sc1573b 48 p c ? t a i c ? v ce i c ? v be electrical characteristics t a = 25 c 3 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification (2sc1573 for ranks q and r only) rank p q r h fe 30 to 100 60 to 150 100 to 220 0 160 40 120 80 0 1.2 1.0 0.8 0.6 0.4 0.2 collector power dissipation p c ( w ) ambient temperature t a ( c ) 010 8 26 4 0 120 100 80 60 40 20 i b = 2 ma 1.8 ma 1.6 ma 1.4 ma 1.2 ma 1.0 ma 0.8 ma 0.2 ma 0.4 ma 0.6 ma t a = 25 c collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 10 v t a = 75 c ? 25 c 25 c base-emitter voltage v be ( v ) collector current i c ( ma )
2sc1573, 2SC1573A, 2sc1573b 3 sjc00108bed i c ? i b v ce(sat) ? i c i b ? v be h fe ? i c f t ? i e c ob ? v cb i cbo ? t a i ebo ? t a safe operation area 0 2.0 1.6 0.4 1.2 0.8 0 120 100 80 60 40 20 v ce = 10 v t a = 25 c base current i b ( ma ) collector current i c ( ma ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 0 1.0 0.8 0.2 0.6 0.4 0 3.0 2.5 2.0 1.5 1.0 0.5 v ce = 10 v t a = 25 c base-emitter voltage v be ( v ) base current i b ( ma ) 0.1 1 10 100 0 360 300 240 180 120 60 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 1 ? 10 ? 100 0 160 120 40 100 140 80 20 60 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 110100 0 10 8 6 4 2 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) 0200 160 40 120 80 1 10 10 2 10 3 10 4 v cb = 250 v ambient temperature t a ( c ) i cbo ( t a ) i cbo ( t a = 25 c ) 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v eb = 5 v ambient temperature t a ( c ) i ebo ( t a ) i ebo ( t a = 25 c ) 1 10 100 1 000 0.1 1 10 100 1 000 single pulse t a = 25 c t = 10 ms t = 1 ms dc i cp i c collector current i c ( ma ) collector-emitter voltage v ce ( v )
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